论文信息 - BJT small-signal equivalent circuit representation

BJT small-signal equivalent circuit representation

This paper presents a small-signal equivalent circuit for bipolar transistors that is a rigorously derived from linearization of the large-signal model. The model includes additional capacitance and transcapacitance elements compared to the common hybrid-π model.

Colin C. McAndrew | Laurence W. Nagel

[1] Y. Tsividis. Operation and modeling of the MOS transistor , 1987 .

[2] Robert G. Meyer,et al. Analysis and Design of Analog Integrated Circuits , 1993 .

[3] J. Fossum,et al. Partitioned-charge-based modeling of bipolar transistors for non-quasi-static circuit simulation , 1986, IEEE Electron Device Letters.

[4] C. Turchetti,et al. On the small-signal behaviour of the MOS transistor in quasistatic operation , 1983 .

[5] R.W. Dutton,et al. A charge-oriented model for MOS transistor capacitances , 1978, IEEE Journal of Solid-State Circuits.