Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Among van der Waals semiconductors, an exciting and rapidly growing development involves the “post‐transition” metal chalcogenide InSe. Here, field effect phototransistors are reported where single layer graphene is capped with n‐type InSe. These device structures combine the photosensitivity of InSe with the unique electrical properties of graphene. It is shown that the light‐induced transfer of charge between InSe and graphene offers an effective method to increase or decrease the carrier density in graphene, causing a change in its resistance that is gate‐controllable and only weakly dependent on temperature. The charge transfer at the InSe/graphene interface is probed by Hall effect and photoconductivity measurmentes and it is demonstrated that light can induce a sign reversal of the quantum Hall voltage and photovoltaic effects in the graphene layer. These findings demonstrate the potential of light‐induced charge transfer in gate‐tunable InSe/graphene phototransistors for optoelectronics and quantum metrology.

[1]  T. Ihn,et al.  Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure , 2018, 2D Materials.

[2]  K. Ensslin,et al.  Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures. , 2018, Nano letters.

[3]  K. Zhou,et al.  Effects of graphene/BN encapsulation, surface functionalization and molecular adsorption on the electronic properties of layered InSe: a first-principles study. , 2018, Physical chemistry chemical physics : PCCP.

[4]  Yuanhui Sun,et al.  InSe: a two-dimensional material with strong interlayer coupling. , 2018, Nanoscale.

[5]  M. Lukin,et al.  Electrical control of charged carriers and excitons in atomically thin materials , 2018, Nature Nanotechnology.

[6]  C. N. Lau,et al.  Integer and Fractional Quantum Hall effect in Ultrahigh Quality Few-layer Black Phosphorus Transistors. , 2018, Nano letters.

[7]  K. Novoselov,et al.  Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal. , 2017, Physical review letters.

[8]  Yi Shi,et al.  Improving the Performance of Graphene Phototransistors Using a Heterostructure as the Light-Absorbing Layer. , 2017, Nano letters.

[9]  Emily F. Smith,et al.  Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation , 2017 .

[10]  Kaiyou Wang,et al.  Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures , 2017, Nanotechnology.

[11]  S. Goossens,et al.  Broadband image sensor array based on graphene–CMOS integration , 2017, Nature Photonics.

[12]  Xiangshan Chen,et al.  The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals , 2016, Scientific Reports.

[13]  K. Novoselov,et al.  High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. , 2016, Nature nanotechnology.

[14]  R. Yakimova,et al.  Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene , 2016, Scientific Reports.

[15]  P. Ordejón,et al.  Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap. , 2016, Nano letters.

[16]  A. Michon,et al.  Quantum Hall resistance standard in graphene devices under relaxed experimental conditions. , 2015, Nature nanotechnology.

[17]  K. Novoselov,et al.  High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures , 2015, Advanced materials.

[18]  A. Shukla,et al.  A high performance graphene/few-layer InSe photo-detector. , 2015, Nanoscale.

[19]  M. Prato,et al.  Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. , 2015, Nanoscale.

[20]  M. Fay,et al.  Quantum confined acceptors and donors in InSe nanosheets , 2014 .

[21]  P. Avouris,et al.  Photodetectors based on graphene, other two-dimensional materials and hybrid systems. , 2014, Nature nanotechnology.

[22]  W. Cao,et al.  Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface , 2014, Advanced materials.

[23]  SUPARNA DUTTASINHA,et al.  Van der Waals heterostructures , 2013, Nature.

[24]  V. Fal’ko,et al.  Quantum resistance metrology using graphene , 2013, Reports on progress in physics. Physical Society.

[25]  Qing Hua Wang,et al.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.

[26]  V. Fal’ko,et al.  Charge transfer between epitaxial graphene and silicon carbide , 2010, 1007.4340.

[27]  Deep Jariwala,et al.  Atomic layers of hybridized boron nitride and graphene domains. , 2010, Nature materials.

[28]  M. Syväjärvi,et al.  Towards a quantum resistance standard based on epitaxial graphene. , 2009, Nature nanotechnology.

[29]  P. Kim,et al.  Experimental observation of the quantum Hall effect and Berry's phase in graphene , 2005, Nature.

[30]  A. Geim,et al.  Two-dimensional gas of massless Dirac fermions in graphene , 2005, Nature.

[31]  F. Manjón,et al.  Pressure dependence of the refractive index in InSe , 2000 .

[32]  L. Eaves,et al.  Fast multicolor photodetectors based on graphene-contacted p-GaSe/n-InSe van der Waals heterostructures , 2017 .

[33]  M. Shur,et al.  Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe , 2001 .