Design And Characterization Of A Schottky Infrared Charge-Coupled Device (IRCCD) Focal Plane Array
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We describe the physics, construction, operational properties, and performance of Schottky mosaic sensors utilizing platinum silicide as the sensing layer. These devices are monolithic and are fabricated with standard integrated circuit grade silicon. Data are presented on quantum yield, transfer characteristic, uniformity, and integration element size. The construction and performance of a second generation, 32x64 element, area array is discussed. Several examples of thermal imaging are shown.