A new concept for high-voltage SOI devices

The concept for a design of high-voltage SOI-devices presented in this paper can be easily incorporated in standard silicon direct bonding (SDB) technology and enables a fabrication of lateral devices with breakdown voltages of more than 6OOV in 2-10pm thick SO1 layers. For such devices, the dependences of the breakdown voltage on the silicon layer thickness, on the doping concentration, and on the buried oxide thickness are discussed.