Tutorial: characterizing SDRAMs

This paper presents characterization methods for an SDRAM in a manufacturing environment. Contact tests, dc tests, basic functional tests, signal margin tests and retention characterization are shown. Measurement of the cell signal is used as an example for pico probing. Special test modes for SDRAMs which can be used to aid characterization and failure analysis (FA) are discussed.

[1]  Keith Baker,et al.  Shmoo Plotting: The Black Art of IC Testing , 1997, IEEE Des. Test Comput..

[2]  Markus Huebl,et al.  Power analysis of DRAMs , 1998, Proceedings Seventh Asian Test Symposium (ATS'98) (Cat. No.98TB100259).

[3]  Jörg E. Vollrath.  Cell signal measurement for high-density DRAMs , 1997, Proceedings International Test Conference 1997.

[4]  John K. DeBrosse,et al.  Flexible test mode approach for 256-Mb DRAM , 1997 .