Etching characterization of shaped hole high density plasma for using MEMS devices
暂无分享,去创建一个
[1] Martin A. Schmidt,et al. Influence of Coil Power on the Etching Characteristics in a High Density Plasma Etcher , 1999 .
[2] Jason W. Weigold,et al. Comparison of Cl2 and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source , 2000 .
[3] S. W. Pang,et al. Etching of Si with Cl2 using an electron cyclotron resonance source , 1993 .
[4] Jinmo Kim,et al. High aspect ratio via etching conditions for deep trench of silicon , 2003 .
[5] R. Hoekstra,et al. Microtrenching resulting from specular reflection during chlorine etching of silicon , 1998 .
[6] W. Riethmuller,et al. Novel Process For A Monolithic Integrated Accelerometer , 1995, Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95.
[7] Y. Arita,et al. Etched Shape Control of Single‐Crystal Silicon in Reactive Ion Etching Using Chlorine , 1987 .
[8] P. Ratnam,et al. Characterization of BCl3 ‐ Cl2 Silicon Trench Etching , 1990 .