5G mm-Wave front-end-module design with advanced SOI process

In this paper, we first introduce the RF performance of Globalfoundries 45RFSOI process. NFET Ft > 290GHz and Fmax >380GHz. Then we present several mm-Wave circuit block designs, i.e., Switch, Power Amplifier, and LNA, based on 45RFSOI process for 5G Front End Module (FEM) applications. For the SPDT switch, insertion loss (IL) < 1dB at 30GHz with 32dBm P1dB and > 25dBm Pmax. For the PA, with a 2.9V power supply, the PA achieves 13.1dB power gain and a saturated output power (Psat) of 16.2dBm with maximum power-added efficiency (PAE) of 41.5% at 24Ghz continuous-wave (CW). With 960Mb/s 64QAM signal, 22.5% average PAE, −29.6dB EVM, and −30.5dBc ACLR are achieved with 9.5dBm average output power.

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