The influence of the inductively-coupled hydrogen plasma on the GaAs surface properties

[1]  D. Chidambarrao,et al.  Thin‐film temperature rise estimates during low energy ion bombardment in a plasma reactor , 1995 .

[2]  M. Naeem,et al.  Grain growth in copper films exposed to magnetically enhanced plasmas , 1995 .

[3]  E. Snow,et al.  Optical characterization of the electrical properties of processed GaAs , 1993 .

[4]  E. Haller,et al.  Hydrogen interactions with defects in crystalline solids , 1992 .

[5]  Stephen J. Pearton,et al.  HYDROGEN DIFFUSION IN CRYSTALLINE SEMICONDUCTORS , 1991 .

[6]  F. Ponce,et al.  Hydrogen in crystalline semiconductors : a review of experimental results , 1991 .

[7]  A. Polyakov,et al.  Hydrogen Passivation of Donors and Acceptors in InP , 1989 .

[8]  O. Brümmer,et al.  Point defects in GaAs studied by correlated positron lifetime, optical, and electrical measurements , 1988 .

[9]  A. A. Studna,et al.  Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV , 1983 .

[10]  D. C. Reynolds,et al.  Photoluminescence identification of ∼77‐meV deep acceptor in GaAs , 1982 .

[11]  J. Sites,et al.  Radiative transitions induced in gallium arsenide by modest heat treatment , 1980 .

[12]  J. L. Shay Photoreflectance Line Shape at the Fundamental Edge in Ultrapure GaAs , 1970 .

[13]  C. Hwang Evidence for Luminescence Involving Arsenic Vacancy-Acceptor Centers inp-Type GaAs , 1969 .

[14]  E. W. Williams Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center , 1968 .

[15]  H. Nelson,et al.  Luminescence in Silicon‐Doped GaAs Grown by Liquid‐Phase Epitaxy , 1968 .