Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN
暂无分享,去创建一个
Hadis Morkoç | Ümit Özgür | Natalia Izyumskaya | Shopan Hafiz | Morteza Monavarian | Vitaliy Avrutin | Saikat Das | H. Morkoç | V. Avrutin | N. Izyumskaya | Ü. Özgür | M. Monavarian | S. Hafiz | Saikat Das
[1] M. Eickhoff,et al. Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires , 2011 .
[2] Friedhelm Bechstedt,et al. Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states , 2011 .
[3] C. Q. Chen,et al. Luminescence from stacking faults in gallium nitride , 2005 .
[4] James S. Speck,et al. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire , 2002 .
[5] James S. Speck,et al. Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates , 2005 .
[6] D. Jena,et al. Charge transport in non-polar and semi-polar III-V nitride heterostructures , 2012 .
[7] Ü. Özgür,et al. Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork , 2007 .
[8] R. Binder,et al. Comparison of optical nonlinearities of type II and type I quantum wells , 1991 .
[9] S. Karpov,et al. Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity , 2010 .
[10] K. Ebeling,et al. Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN , 1997 .
[11] Sebastian Metzner,et al. Determination of carrier diffusion length in GaN , 2015 .
[12] D. Jena,et al. Charged basal stacking fault scattering in nitride semiconductors , 2010, 1011.0514.
[13] Detlef Hommel,et al. Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition , 2005 .
[14] Hadis Morkoç,et al. Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients , 2015, Photonics West - Optoelectronic Materials and Devices.
[15] T. Wunderer,et al. I2basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band , 2011 .
[16] B. Monemar,et al. Microscopic emission properties of nonpolar α-plane GaN grown by HVPE , 2006, SPIE OPTO.
[17] Binder,et al. Theory of band-edge optical nonlinearities in type-I and type-II quantum-well structures. , 1991, Physical review. B, Condensed matter.
[18] B. Guizal,et al. Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells , 2014 .
[19] B. Guizal,et al. Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells , 2014 .
[20] T. Y. Liu,et al. Impact of nucleation conditions on the structural and optical properties of M-plane GaN(11̄00) grown on γ-LiAlO2 , 2002 .
[21] Sebastian Metzner,et al. Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers , 2015, Photonics West - Optoelectronic Materials and Devices.
[22] Hadis Morkoç,et al. InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes , 2010 .
[23] Hadis Morkoç,et al. Strong carrier localization in stacking faults in semipolar (11-22) GaN , 2015, Photonics West - Optoelectronic Materials and Devices.
[24] Hadis Morkoç,et al. Enhancement of coherent acoustic phonons in InGaN multiple quantum wells , 2015, Photonics West - Optoelectronic Materials and Devices.
[25] O. Brandt,et al. Luminescence associated with stacking faults in GaN , 2014, 1405.1261.
[26] H. Morkoç,et al. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers , 2015 .
[27] Nakayama,et al. Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces. , 1994, Physical review. B, Condensed matter.
[28] Sebastian Metzner,et al. Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes , 2015, Photonics West - Optoelectronic Materials and Devices.
[29] S. Tong,et al. Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN , 2003 .
[30] Benoit Deveaud-Plédran,et al. Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures , 2011 .