Determination of proximity effect parameters in electron‐beam lithography

A new empirical method for determining proximity parameters in electron‐beam lithography is introduced on the assumption that the proximity function is composed of two Gaussians. This method is based on the clearance of resist after development in the nonexposed square region surrounded by the latticed exposed one. Since there are many identical patterns arranged two dimensionally, statistically averaged data of proximity parameters is obtained without undertaking scanning electron microscopy for linewidth measurements. Theoretical considerations are combined with the experimental observations in order to calculate proximity parameters by the use of the design pattern.