III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook
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[1] S. A. Ringel,et al. Epitaxially-grown metamorphic GaAsP/Si dual-junction solar cells , 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
[2] Daniel J. Friedman,et al. III-N-V semiconductors for solar photovoltaic applications , 2002 .
[3] M. Lee,et al. Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates , 2005 .
[4] Gerald Siefer,et al. Comparison of Direct Growth and Wafer Bonding for the Fabrication of GaInP/GaAs Dual-Junction Solar Cells on Silicon , 2014, IEEE Journal of Photovoltaics.
[5] M. Green,et al. Design of bottom silicon solar cell for multijunction devices , 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
[6] G. F. Virshup,et al. A 31%-efficient GaAs/silicon mechanically stacked, multijunction concentrator solar cell , 1988, Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference.
[7] Brian Corbett,et al. Theoretical performance of multi-junction solar cells combining III-V and Si materials. , 2012, Optics express.
[8] J. Boeckl,et al. Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates , 2004 .
[9] M. Yamaguchi. Potential and present status of III–V/Si tandem solar cells , 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
[10] Karin Hinzer,et al. The down-to-earth future of Si substrate multi-junction concentrator photovoltaics , 2011, 2011 IEEE Electrical Power and Energy Conference.
[11] I. Rey‐Stolle,et al. Optimizing bottom subcells for III-V-on-Si multijunction solar cells , 2011, 2011 37th IEEE Photovoltaic Specialists Conference.
[12] M. Yamaguchi,et al. Analysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates , 1989 .
[13] Steven A. Ringel,et al. Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−xGex/Si substrates , 1998 .
[14] R. Reedy,et al. Lattice-matched GaNPAs-on-silicon tandem solar cells , 2005, Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..
[15] S. Vernon,et al. Experimental study of solar cell performance versus dislocation density , 1990, IEEE Conference on Photovoltaic Specialists.
[16] L. Tu,et al. Modeling of InGaN p-n junction solar cells , 2013 .
[17] Rao Tatavarti,et al. InGaP/GaAs/InGaAs inverted metamorphic (IMM) solar cells on 4″ epitaxial lifted off (ELO) wafers , 2010, 2010 35th IEEE Photovoltaic Specialists Conference.
[18] Y. Arakawa,et al. III-V/Si hybrid photonic devices by direct fusion bonding , 2012, Scientific Reports.
[19] Jan Benick,et al. Fabrication of GaInP/GaAs//Si Solar Cells by Surface Activated Direct Wafer Bonding , 2013, IEEE Journal of Photovoltaics.
[20] Gerald B. Stringfellow,et al. Solid phase immiscibility in GaInN , 1996 .
[21] M.A. Smith,et al. Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates , 2005, IEEE Transactions on Electron Devices.
[22] S. A. Ringel,et al. Metamorphic gaasp and ingap photovoltaic materials on Si for high-efficiency III-V/Si multijunction solar cells , 2010, 2010 35th IEEE Photovoltaic Specialists Conference.
[23] Thomas A. Langdo,et al. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing , 1998 .
[24] Davood Shahrjerdi,et al. High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology , 2012 .
[25] H. Atwater,et al. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.
[26] V. Haven,et al. Metalorganic chemical vapor deposition of GaAs on Si for solar cell applications , 1986 .
[27] I. Rey‐Stolle,et al. Numerical simulation and experimental facts about bottom-cell optimization for III-V on Silicon multijunction solar cells , 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
[28] Sangam Chatterjee,et al. Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate , 2011 .
[29] Limei Yang,et al. Spectrum-optimized Si-based III-V multijunction photovoltaics , 2012, OPTO.
[30] S. Ringel,et al. MOCVD-Grown GaP/Si Subcells for Integrated III–V/Si Multijunction Photovoltaics , 2014, IEEE Journal of Photovoltaics.
[31] Steven A. Ringel,et al. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates , 2000 .
[32] Frank Dimroth,et al. Overview about Technology Perspectives for High Efficiency Solar Cells for Space and Terrestrial Applications , 2013 .
[33] Martin A. Green,et al. Silicon wafer-based tandem cells: The ultimate photovoltaic solution? , 2013, Photonics West - Optoelectronic Materials and Devices.
[34] O. P. Pchelyakov,et al. GaAs epitaxy on Si substrates: modern status of research and engineering , 2008 .
[35] J. Wollweber,et al. Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT , 2000 .
[36] A. Norman,et al. Lattice-mismatched GaAsP Solar Cells Grown on Silicon by OMVPE , 2006, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
[37] A. Lochtefeld,et al. Analysis of tandem III–V/SiGe devices grown on Si , 2012, 2012 38th IEEE Photovoltaic Specialists Conference.
[38] T. L. Williamson,et al. InGaN/Si heterojunction tandem solar cells , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.
[39] C. Robert,et al. Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells , 2013 .
[40] Steven A. Ringel,et al. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy , 2009 .
[41] W. Alan Doolittle,et al. Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells , 2014, IEEE Journal of Photovoltaics.
[42] Wladek Walukiewicz,et al. Finite element simulations of compositionally graded InGaN solar cells , 2010 .
[43] M.M. Al-Jassim,et al. Efficiency improvements in GaAs-on-Si solar cells , 1988, Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference.
[44] R. Opila,et al. Dual-junction GaAsP/SiGe on silicon tandem solar cells , 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
[45] Andrew M. Carlin,et al. Ideal GaP/Si heterostructures grown by MOCVD: III-V/active-Si subcells, multijuntions, and MBE-to-MOCVD III-V/Si interface science , 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
[46] E. Fitzgerald,et al. Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage , 2006, IEEE Electron Device Letters.
[47] R. Kleiman,et al. Fabrication of High-Efficiency III–V on Silicon Multijunction Solar Cells by Direct Metal Interconnect , 2014, IEEE Journal of Photovoltaics.
[48] Stephanie Tomasulo,et al. Comparison of GaAsP solar cells on GaP and GaP/Si , 2013 .
[49] Takashi Jimbo,et al. Photovoltaic properties of an AlxGa1−xAs solar cell (x=0–0.22) grown on Si substrate by metalorganic chemical vapor deposition and thermal cycle annealing , 1996 .
[50] Takashi Jimbo,et al. High efficiency AlGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition , 1995 .
[51] H. Yuen,et al. High-efficiency multijunction solar cells employing dilute nitrides , 2012 .