GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers

Oriented GaN layers with a thickness of about 10 μm have been grown by hydride-chloride vaporphase epitaxy (HVPE) on Si(111) substrates with AlN buffer layers. The best samples are characterized by a halfwidth (FWHM) of the X-ray rocking curve of ωθ = 3–4 mrad. The level of residual mechanical stresses in AlN buffer layers decreases with increasing temperature of epitaxial growth. The growth at 1080°C is accompanied by virtually complete relaxation of stresses caused by the lattice mismatch between AlN and Si.

[1]  Theeradetch Detchprohm,et al.  Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain , 1992 .

[2]  Qing Yang,et al.  Lattice-matched HfN buffer layers for epitaxy of GaN on Si , 2002 .

[3]  A. N. Smirnov,et al.  Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC , 1997 .

[4]  S. Chung,et al.  Relationship between crystallographic orientation and 3.42 eV emission bands in GaN grown by HVPE on Si substrate , 1999 .

[5]  X. Hao,et al.  Characterization of GaN films grown on silicon (111) substrates , 2003 .

[6]  Yoshinao Kumagai,et al.  Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors , 2001 .

[7]  P. W. Yu,et al.  Photoluminescence studies of GaN layers grown by hydride vapor phase epitaxy , 2001 .

[8]  Isamu Akasaki,et al.  Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE , 1989 .

[9]  J. Hayes,et al.  Raman scattering studies on single-crystalline bulk AlN under high pressures , 2001 .

[10]  S. Denbaars,et al.  Growth of thick (112¯0) GaN using a metal interlayer , 2004 .

[11]  Cheul-Ro Lee,et al.  High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD , 2003 .

[12]  D. Bimberg,et al.  Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer , 1999 .

[13]  J. P. Liu,et al.  Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) , 2003 .