$\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming

We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors from 2 μm down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (VT) shift with narrow channel widths of less than 200 nm. Our results also show that transistors with thinner channel thicknesses have larger VT shifts associated with width scaling. Devices fabricated on a 6-nm-thick MoS2 crystal underwent the transition from depletion mode to enhancement mode.

[1]  P. Ye,et al.  Channel length scaling of MoS2 MOSFETs. , 2012, ACS nano.

[2]  Gang Lu,et al.  Optical identification of single- and few-layer MoS₂ sheets. , 2012, Small.

[3]  Yu‐Chuan Lin,et al.  Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. , 2012, Nano letters.

[4]  P. Ye,et al.  The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition , 2012, 1202.3391.

[5]  B. Lu,et al.  Tri-Gate Normally-Off GaN Power MISFET , 2012, IEEE Electron Device Letters.

[6]  Z. Yin,et al.  Single-layer MoS2 phototransistors. , 2012, ACS nano.

[7]  Hua Zhang,et al.  Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. , 2012, Small.

[8]  P. Ye,et al.  $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric , 2011, IEEE Electron Device Letters.

[9]  P. D. Ye,et al.  First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach , 2011, 2011 International Electron Devices Meeting.

[10]  P. Ajayan,et al.  Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate , 2011, 1111.5072.

[11]  R. Pillarisetty,et al.  Academic and industry research progress in germanium nanodevices , 2011, Nature.

[12]  P. Ye,et al.  Atomic-layer-deposited Al2O3 on Bi2Te3 for topological insulator field-effect transistors , 2011, 1108.1333.

[13]  Youngki Yoon,et al.  How good can monolayer MoS₂ transistors be? , 2011, Nano letters.

[14]  P. Ye,et al.  GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric , 2011, IEEE Electron Device Letters.

[15]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[16]  James Analytis,et al.  Two-dimensional surface state in the quantum limit of a topological insulator , 2010 .

[17]  Hyunhyub Ko,et al.  Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors , 2010, Nature.

[18]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[19]  C. Kane,et al.  Topological Insulators , 2019, Electromagnetic Anisotropy and Bianisotropy.

[20]  Xi Dai,et al.  Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface , 2009 .

[21]  P. Ye,et al.  High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm , 2008, IEEE Electron Device Letters.

[22]  Jin-Woo Han,et al.  Sub-5nm All-Around Gate FinFET for Ultimate Scaling , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

[23]  D. Schroder.  Semiconductor Material and Device Characterization, 3rd Edition , 2005 .

[24]  P. Kim,et al.  Experimental observation of the quantum Hall effect and Berry's phase in graphene , 2005, Nature.

[25]  J. Wilcoxon,et al.  Nanosize Semiconductors for Photooxidation , 2005 .

[26]  K. Novoselov,et al.  Two-dimensional atomic crystals. , 2005, Proceedings of the National Academy of Sciences of the United States of America.

[27]  V. Podzorov,et al.  High-mobility field-effect transistors based on transition metal dichalcogenides , 2004, cond-mat/0401243.

[28]  D. Schroder.  Semiconductor Material and Device Characterization , 1990 .

[29]  Xi Dai,et al.  Topological insulators in Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 with a single Dirac cone on the surface , 2009 .

[30]  Gerhard K. Ackermann,et al.  Threshold voltage of narrow channel field effect transistors , 1976 .