Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

We propose a new technique for fabricating 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into the SiO<sub>2</sub>/4H-SiC (0001) interface by postoxidation annealing using phosphoryl chloride (POCl<sub>3</sub>). The interface state density near the conduction band edge of 4H-SiC was reduced significantly, and the peak field-effect mobility of lateral 4H-SiC MOSFETs on (0001) Si face was improved to 89 cm<sup>2</sup>/V · s by POCl<sub>3</sub> annealing at 1000°C.

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