论文信息 - The evolution of InP as a key semiconductor technology

The evolution of InP as a key semiconductor technology

Over the past 35 years InP emerged as one of the key technologies in support of the telecommunications revolution that is still underway. This review will address the evolution of the InP crystal growth technology from its origins to the present as driven by real and hyped market demands

G. Antypas

[1] W. Gault,et al. A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals , 1986 .

[2] J. J. Scheer,et al. GaAs-Cs: A new type of photoemitter , 1965 .

[3] Herbert Kroemer,et al. A proposed class of hetero-junction injection lasers , 1963 .

[4] N. Holonyak,et al. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS , 1962 .

[5] W. E. Krag,et al. SEMICONDUCTOR MASER OF GaAs , 1962 .

[6] J. D. Kingsley,et al. Coherent Light Emission From GaAs Junctions , 1962 .

[7] W. Dumke,et al. STIMULATED EMISSION OF RADIATION FROM GaAs p‐n JUNCTIONS , 1962 .

[8] E. Metz,et al. A Technique for Pulling Single Crystals of Volatile Materials , 1962 .

[9] J. Mullin,et al. Liquid encapsulation crystal pulling at high pressures , 1968 .