论文信息 - Statistical evaluation for trap energy level of RTS characteristics

Statistical evaluation for trap energy level of RTS characteristics

The energy distributions of traps which cause RTS noise using the array test pattern having a large number of n-MOS and p-MOS are investigated. The more traps which cause RTS noise located near the conduction band. The phenomena in p-MOS are almost the same as n-MOS. However, the number of traps in p-MOS is less than that in n-MOS. The tendency of the energy distribution of the traps near the conduction band edge is different from that near the valence band edge.

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