论文信息 - A NIR-Sensitivity-Enhanced Single-Photon Avalanche Diode in 0 . 18 μ m CMOS

A NIR-Sensitivity-Enhanced Single-Photon Avalanche Diode in 0 . 18 μ m CMOS

We introduce a single-photon avalanche diode with enhanced near-infrared sensitivity in 0.18μm CMOS technology. Despite its sensitivity to long-wavelength optical signals, the proposed SPAD has been designed to feature a relatively low breakdown voltage of approximately 20V. Experimental evaluation of the proposed SPAD has revealed photon detection efficiencies of 64.8% and 20.2% at 610nm and 870nm, respectively. Sensitivity with respect to the stateof-the-art has also been improved through fill factor optimization. Further device characterization has been carried out in terms of dark count rate, afterpulsing probability, and timing jitter.

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