Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis

An improved method for self-assembly fabrication of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) is presented, combining the unique design of biased/floating potential electrode geometry and the technique of aligning CNTs by pre-defined trenches in ''Sandwich''-like resist layers. Super-aligned SWCNT FETs bridging biased/floating potential electrode pairs with precisely controlled location can be demonstrated. Moreover, SWCNT FETs fabricated by this method exhibit excellent electrical properties, such as I"o"n/I"o"f"f ratio up to 10^5 and sub-threshold slope ~130mV/dec. This novel technique provides a more effective and flexible way to solve the CNT assembly issue. It could also enable the fabrication of future CNT based complementary logic circuit and nano-electrical-mechanical-system (NEMS).