Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

In this paper, a new continuous multilevel compact model for phase-change memory (PCM) is proposed. It is based on the modified rate equations with the introduction of a variable related to material melting. The model is evaluated using a large set of dynamic measurements and shows a good accuracy with a single model card. All fitting parameters are discussed, and their impacts are detailed. Full circuit simulation is performed. Good convergence and fast simulation time suggest that this new compact model can be exploited for PCM circuit design.

[1]  K. Sonoda,et al.  A Compact Model of Phase-Change Memory Based on Rate Equations of Crystallization and Amorphization , 2008, IEEE Transactions on Electron Devices.

[2]  Andrea Cappelli,et al.  Modeling the dynamic self-heating of PCM , 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

[3]  Daniele Ielmini,et al.  Evidence for Non-Arrhenius Kinetics of Crystallization in Phase Change Memory Devices , 2013, IEEE Transactions on Electron Devices.

[4]  Jin He,et al.  Phase-Change Memory RESET Model Based on Detailed Cell Cooling Profile , 2011, IEEE Transactions on Electron Devices.

[5]  Marina Reyboz,et al.  Phase-change memory: A continuous multilevel compact model of subthreshold conduction and threshold switching , 2018 .

[6]  M. Avrami.  Granulation, Phase Change, and Microstructure Kinetics of Phase Change. III , 1941 .

[7]  A. Pirovano,et al.  Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials , 2004, IEEE Transactions on Electron Devices.

[8]  Simone Raoux,et al.  Phase change materials : science and applications , 2009 .

[9]  Sung-Mo Kang,et al.  Compact Verilog-A model of phase-change RAM transient behaviors for multi-level applications , 2011 .

[10]  Robert M. Hill,et al.  Poole-Frenkel conduction in amorphous solids , 1971 .

[11]  Fabrizio Lombardi,et al.  A New Comprehensive Model of a Phase Change Memory (PCM) Cell , 2014, IEEE Transactions on Nanotechnology.

[12]  Zhitang Song,et al.  A Compact Spice Model with Verilog-A for Phase Change Memory , 2011 .

[13]  T. Nandha Kumar,et al.  Improved SPICE model for Phase Change Memory cell , 2014, 2014 5th International Conference on Intelligent and Advanced Systems (ICIAS).

[14]  Y. P. Varshni.  Temperature dependence of the energy gap in semiconductors , 1967 .

[15]  M. Breitwisch,et al.  Multilevel Phase-Change Memory Modeling and Experimental Characterization , 2009 .

[16]  Wang Jing,et al.  Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays , 2016 .

[17]  C.D. Wright,et al.  Parameterized SPICE model for a phase-change RAM device , 2006, IEEE Transactions on Electron Devices.

[18]  P. Zuliani,et al.  Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

[19]  Giorgio Servalli.  Emerging memory technologies for high density applications , 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

[20]  A. Pirovano,et al.  A Phase Change Memory Compact Model for Multilevel Applications , 2007, IEEE Electron Device Letters.

[21]  Serge Blonkowski,et al.  Coupling the Phase-Field Method with an electrothermal solver to simulate phase change mechanisms in PCRAM cells , 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[22]  F. Xiong,et al.  Towards ultimate scaling limits of phase-change memory , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[23]  Stanford R. Ovshinsky,et al.  Amorphous semiconductors for switching, memory, and imaging applications , 1973 .

[24]  A. Toffoli,et al.  Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications , 2011 .

[25]  Daniel Krebs,et al.  Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells , 2016 .

[26]  Evangelos Eleftheriou,et al.  Inherent stochasticity in phase-change memory devices , 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

[27]  A. Pirovano,et al.  On the RESET-SET transition in Phase Change Memories , 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.

[28]  陈小刚,et al.  An SPICE model for phase-change memory simulations , 2011 .

[29]  G. L. Pearson,et al.  Properties and Uses of Thermistors--- Thermally Sensitive Resistors , 1946, Transactions of the American Institute of Electrical Engineers.

[30]  P. Zuliani,et al.  Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[31]  B. Rajendran,et al.  Understanding amorphous states of phase-change memory using Frenkel-Poole model , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[32]  Alessandro Cabrini,et al.  Compact model for phase change memory cells , 2014, 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME).

[33]  Haralampos Pozidis,et al.  Recent Progress in Phase-Change Memory Technology , 2016, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.