A computer algorithm for accurate and repeatable profile analysis using anodization and stripping of silicon

Abstract The increased need for accurate and repeatable impurity profiling of shallow junction devices places stringent requirements on the profiling procedures and subsequent data reduction. A computer algorithm is described which simplifies the conversion of sheet resistance to impurity profile as required by the anodization and stripping technique. Error magnification commonly found in discrete data differentiation is avoided. Empirical mobility vs carrier concentration expressions are derived from several sources, and a self-contained computer algorithm is given which allows for data reduction on commonly available minicomputers using Fortran. The experimenter is provided with a check on the accuracy of the profile information.

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