论文信息 - A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors

A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors

We present a numerical HF noise analysis of Si/Si1-xGex/Si heterojunction bipolar transistors based on the time-dependent solution of the drift-diffusion equations. For the MHz range an analytical expression for the noise figures is derived.

Bernd Heinemann | Frank Herzel | B. Heinemann | F. Herzel

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