论文信息 - 20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage

20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage

The authors have fabricated a ridge waveguide electroabsorption modulator based on the quantum-confined Stark effect in InGaAsP/InGaAsP multiple quantum wells. The drive voltage for 12-dB extinction ratio is 1.2 V, and the frequency response is flat within 2 dB from DC to 20 GHz. Operation at 20 Gb/s is reported. Extensive data concerning the parasitic phase modulation (chirping) are obtained as a function of applied bias acid operating wavelength.<<ETX>>

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