Quantum confined light modulators
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[1] J. T. Mullins,et al. Room temperature ZnSe/ZnCdSe bistable self‐electro‐optic effect device operating at 488 nm , 1993 .
[2] W. I. Wang,et al. Normal incidence infrared modulator using direct–indirect transitions in GaSb quantum wells , 1993 .
[3] James S. Harris,et al. High contrast asymmetric Fabry–Perot electro‐absorption modulator with zero phase change , 1993 .
[4] D. Miller,et al. Analog differential self-linearized quantum-well self-electro-optic-effect modulator. , 1993, Optics letters.
[5] K. K. Ko,et al. Photoluminescence and electro‐optic properties of small (25–35 nm diameter) quantum boxes , 1993 .
[6] Yasunori Tokuda,et al. Optical bistable responses based on self‐electro‐optic effect in a nonbiased asymmetric coupled quantum well p‐i‐n photodiode , 1993 .
[7] P. Kiesel,et al. Electroabsorption in InGaAsP: electro‐optical modulators and bistable optical switches , 1993 .
[8] C. Starck,et al. Low spectral chirp and large electroabsorption in a strained InGaAsP/InGaAsP multiple quantum well modulator , 1993 .
[9] P. Kiesel,et al. High contrast electro‐optic n‐i‐p‐i doping superlattice modulator , 1993 .
[10] Koichi Wakita,et al. Optical pulse generation with high repetition rate by sinusoidally-driven InGaAs/InAlAs multiquantum well modulator , 1993 .
[11] Anthony L. Lentine,et al. Batch fabrication and operation of GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays , 1993 .
[12] N. Gupta,et al. Fabrication of an optoelectronic AlGaAs/GaAs waveguide neuron , 1993, IEEE Photonics Technology Letters.
[13] J. Hwang,et al. Numerical analysis of a step‐coupled well: A novel quantum‐confined Stark shift structure , 1992 .
[14] T. Chang,et al. Polarization-independent strained InGaAs/InGaAlAs quantum-well phase modulators , 1992, IEEE Photonics Technology Letters.
[15] A. Witt,et al. Electro‐optic modulation by electron transfer in multiple InGaAsP/InP barrier, reservoir, and quantum well structures , 1992 .
[16] T. K. Woodward,et al. Multiple quantum well light modulators for the 1.06 μm range on InP substrates: InxGa1−xAsyP1−y/InP, InAsyP1−y/InP, and coherently strained InAsyP1−y/InxGa1−xP , 1992 .
[17] David A. B. Miller,et al. Logic self-electrooptic effect devices: quantum-well optoelectronic multiport logic gates, multiplexers, demultiplexers, and shift registers , 1992 .
[18] T. K. Woodward,et al. Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit , 1992, IEEE Photonics Technology Letters.
[19] Anthony L. Lentine,et al. Diode‐clamped symmetric self‐electro‐optic effect devices with subpicojoule switching energies , 1992 .
[20] S. Giugni,et al. Novel Dual Wavelength Electro-Optical Bistability in InGaAs/AlGaAs Multiple Quantum Wells , 1992 .
[21] K. Fujiwara,et al. Dual Wavelength Electro-Optical Bistability in an Asymmetric Self-Electro-Optic Effect Device , 1992 .
[22] Elsa Garmire,et al. InAs/GaAs short‐period strained‐layer superlattices grown on GaAs as quantum confined Stark effect modulators , 1992 .
[23] H. Gibbs,et al. High contrast, submilliwatt power InGaAs/GaAs strained-layer multiple-quantum-well asymmetric reflection modulator , 1991 .
[24] A. Harwit,et al. Optical modulation in very thick coupled InxGa1−xAs/GaAs multiple quantum well structures , 1991 .
[25] T. Boykin,et al. AlGaAs/AlAs QW modulator for 6328 Å operation , 1991 .
[26] Keith W. Goossen,et al. AlxGa1-xAs-AlAs quantum well surface-normal electroabsorption modulators operating at visible wavelengths , 1991 .
[27] D. E. Watkins,et al. Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells , 1991 .
[28] A. Madhukar,et al. High‐contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry–Perot modulator, detector, and resonant tunneling diode , 1991 .
[29] Niloy K. Dutta,et al. An AlGaAs double‐heterojunction bipolar transistor grown by molecular‐beam epitaxy , 1991 .
[30] M. Wegener,et al. High quality GaInAs/AlGaInAs/AlInAs heterostructures on Si ion implanted semi-insulating InP substrates for novel high performance optical modulators , 1991 .
[31] C. Juang,et al. An enhanced and linear Stark shift in n‐i‐n AlGaAs/GaAs symmetric and asymmetric coupled quantum wells , 1991 .
[32] James S. Harris,et al. Novel cavity design for high reflectivity changes in a normally off electroabsorption modulator , 1991 .
[33] Sipe,et al. Exciton Stark ladder in semiconductor superlattices. , 1991, Physical review. B, Condensed matter.
[34] G. R. Hadley,et al. Optical switching in N × N arrays of individually addressable electroabsorption modulators based on Wannier–Stark carrier localization in GaAs/GaAlAs superlattices , 1991 .
[35] Joel N. Schulman,et al. Wave Mechanics Applied to Semiconductor Heterostructures , 1991 .
[36] L. Coldren,et al. Self-electro-optic device based on a superlattice asymmetric Fabry-Perot modulator with an on/off ratio >~ 100:1 , 1990 .
[37] R. P. Webb,et al. High speed opto-electronic neural network , 1990 .
[38] I. A. Shcherbakov,et al. Non-linear population processes of Er3+ laser levels in chromium-doped garnet crystals , 1990 .
[39] Kang L. Wang,et al. Large Stark shifts of the local to global state intersubband transitions in step quantum wells , 1990 .
[40] F. Jain,et al. Multiple quantum well optical modulator structures using surface acoustic wave induced Stark effect , 1989, IEEE Photonics Technology Letters.
[41] D. Chemla,et al. Room‐temperature electroabsorption and switching in a GaAs/AlGaAs superlattice , 1989 .
[42] K. L. Wang,et al. Large Stark effects for transitions from local states to global states in quantum well structures , 1989 .
[43] L.A. D'Asaro,et al. Energy scaling and subnanosecond switching of symmetric self-electrooptic effect devices , 1989, IEEE Photonics Technology Letters.
[44] Jasprit Singh,et al. Theoretical investigation of an integrated all-optical controller-modulator device using QCSE in a multiquantum well phototransistor , 1989 .
[45] H. Ehrenreich,et al. Carrier‐activated light modulation , 1988 .
[46] Yong-Hee Lee,et al. Electro-Dispersive Multiple Quantum Well Modulator , 1988 .
[47] William D. Goodhue,et al. Molecular‐beam epitaxially grown spatial light modulators with charge‐coupled‐device addressing , 1988 .
[48] T. Wood. Multiple quantum well (MQW) waveguide modulators , 1988 .
[49] H. S. Hinton,et al. Symmetric self‐electro‐optic effect device: Optical set‐reset latch , 1988 .
[50] David A. B. Miller,et al. Self‐electro‐optic effect device and modulation convertor with InGaAs/InP multiple quantum wells , 1988 .
[51] David A. B. Miller,et al. Quantum Wells For Optical Information Processing , 1987 .
[52] D. Miller,et al. Quadratic electro‐optic effect due to the quantum‐confined Stark effect in quantum wells , 1987 .
[53] Koji Ishida,et al. InGaAsP/InP optical switches using carrier induced refractive index change , 1987 .
[54] D. Miller,et al. Electric-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rules , 1986 .
[55] C. Burrus,et al. The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation , 1985 .
[56] Wood,et al. Electric field dependence of optical absorption near the band gap of quantum-well structures. , 1985, Physical review. B, Condensed matter.
[57] K. Wakita,et al. High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wells , 1985 .
[58] C A Burrus,et al. Optical-level shifter and self-linearized optical modulator using a quantum-well self-electro-optic effect device. , 1984, Optics letters.
[59] David A. B. Miller,et al. Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures , 1983 .
[60] D. Miller,et al. Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures , 1982 .
[61] John D. Dow,et al. Electroabsorption in Semiconductors: The Excitonic Absorption Edge , 1970 .
[62] K. Tharmalingam. Optical Absorption in the Presence of a Uniform Field , 1963 .
[63] I. Kotaka,et al. High-speed InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators with bandwidth in excess of 20 GHz , 1992, IEEE Photonics Technology Letters.
[64] Stephan W. Koch,et al. Optical nonlinearities and instabilities in semiconductors , 1986 .
[65] W. Wiegmann,et al. High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure , 1983, 1983 International Electron Devices Meeting.