Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors

The first long wavelength quantum well infrared photodetector based on valence band intersubband absorption holes is demonstrated. A normal incidence quantum efficiency of η=28% and detectivity of D*λ=3.1×1010 cm √Hz/W at T=77 K, for a cutoff wavelength λc=7.9 μm, have been achieved.

[1]  Kang L. Wang,et al.  Intersubband absorption in Si1−xGex/Si multiple quantum wells , 1990 .

[2]  B. F. Levine,et al.  High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors , 1990 .

[3]  Kwong-Kit Choi,et al.  10 μm infrared hot‐electron transistors , 1990 .

[4]  Keith W. Goossen,et al.  Grating enhancement of quantum well detector response , 1988 .

[5]  Amnon Yariv,et al.  Application of internal photoemission from quantum-well and heterojunction superlattices to infrared photodetectors , 1983 .

[6]  B. F. Levine,et al.  InGaAs/InP long wavelength quantum well infrared photodetectors , 1991 .

[7]  L. C. West,et al.  First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well , 1985 .

[8]  R. F. Kopf,et al.  Photovoltaic GaAs quantum well infrared detectors at 4.2 μm using indirect AlxGa1−x barriers , 1991 .

[9]  Naresh Chand,et al.  Bound to continuum superlattice miniband long wavelength GaAs/AlxGa1−xAs photoconductors , 1991 .

[10]  A. Gossard,et al.  Spectroscopy of two-dimensional hole gases in GaAs-(AlGa)As heterostructures , 1986 .

[11]  B. F. Levine,et al.  Dependence of the performance of GaAs/AlGaAs quantum well infrared photodetectors on doping and bias , 1991 .

[12]  D. Pan,et al.  Advantages of an indirect semiconductor quantum well system for infrared detection , 1989 .

[13]  R. A. Logan,et al.  GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings , 1989 .

[14]  Frank Fuchs,et al.  Intersubband absorption and infrared photodetection at 3.5 and 4.2 μm in GaAs quantum wells , 1991 .

[15]  Chang,et al.  Saturation of intersubband transitions in p-type semiconductor quantum wells. , 1989, Physical review. B, Condensed matter.

[16]  Naresh Chand,et al.  Large photoconductive gain in quantum well infrared photodetectors , 1990 .

[17]  S. R. Andrews,et al.  Experimental and theoretical studies of the performance of quantum‐well infrared photodetectors , 1991 .

[18]  B. K. Janousek,et al.  High‐detectivity GaAs quantum well infrared detectors with peak responsivity at 8.2 μm , 1990 .

[19]  Barry F. Levine,et al.  10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging camera , 1991 .

[20]  Lester J. Kozlowski,et al.  LWIR 128*128 GaAs/AlGaAs multiple quantum well hybrid focal plane array , 1991 .

[21]  J. Kotthaus,et al.  Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon , 1984 .

[22]  C. Bethea,et al.  Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector , 1989 .

[23]  J. Y. Andersson,et al.  Quantum efficiency enhancement of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a grating coupler , 1991 .