论文信息 - Epitaxial N-type silicon solar cells with 20% efficiency

Epitaxial N-type silicon solar cells with 20% efficiency

Silicon wafers have still a significant contribution to the total cost of production for silicon solar cells. One cost driver when using classical wafering techniques is kerf loss. With the approach using porous silicon as a detachment layer and as a seed layer for epitaxy kerf losses can be avoided. In this work, solar cells with epitaxially grown n-type wafers are presented. The best EpiWafer-cell reaches an open circuit voltage of 657.5 mV, a short circuit current of 39.6 mA/cm2 and a fill factor of 77%. The resulting energy conversion efficiency of 20% proves the high quality of this material.

[1] T. Ravi,et al. High efficiency heterojunction solar cells on n-type kerfless mono crystalline silicon wafers by epitaxial growth , 2015 .

[2] S. Glunz,et al. Tunnel oxide passivated contacts as an alternative to partial rear contacts , 2014 .

[3] Rolf Brendel,et al. 19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon , 2012 .

[4] H. Lautenschlager,et al. Plasma Hydrogen Passivation For Crystalline Silicon Thin-Films , 2008 .

[5] C. Haase,et al. The RTCVD160 - a new lab-type silicon CVD processor for silicon deposition on large area substrates , 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.

[6] Rolf Brendel,et al. Review of Layer Transfer Processes for Crystalline Thin-Film Silicon Solar Cells , 2001 .

[7] S. Glunz,et al. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics , 2014 .

[8] Stefan Janz,et al. Reorganization of porous silicon: effect on epitaxial layer quality and detachment , 2014 .