Experiments on the Origin of Process Induced Recombination Centers in Silicon.
暂无分享,去创建一个
[1] C. Sah,et al. Junction edge region thermally stimulated capacitance (TSCAP) of n ‐Si doped with phosphorus and bismuth , 1974 .
[2] C. Sah,et al. Quenched-in centers in silicon p + n junctions , 1974 .
[3] C. Sah,et al. Spherical-Square-Well Defect-Potential Model for 1-MeV Electron Irradiated Defects in Silicon , 1973 .
[4] J. W. Walker,et al. Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon , 1973 .
[5] C. Sah,et al. Thermally stimulated capacitance for shallow majority‐carrier traps in the edge region of semiconductor junctions , 1973 .
[6] H. Fu,et al. Current and capacitance transient responses of MOS capacitor. II. Recombination centers in the surface space charge layer , 1972 .
[7] H. Fu,et al. Thermally Stimulated Capacitance (TSCAP) in p‐n Junctions , 1972 .
[8] Masayuki Yoshida,et al. Dissociative Diffusion of Gold in Silicon , 1970 .
[9] A. Willoughby,et al. The diffusion of gold in thin silicon slices , 1970 .
[10] A. Tasch,et al. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments , 1970 .
[11] A. Y. C. Yu,et al. The metal-semiconductor contact: an old device with a new future , 1970, IEEE Spectrum.
[12] C. Sah,et al. LOW‐TEMPERATURE HIGH‐FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP‐AND SHALLOW‐LEVEL IMPURITY CENTER CONCENTRATIONS , 1969 .
[13] A. Tasch,et al. THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON , 1969 .
[14] J. Lambert,et al. The gettering of gold and copper from silicon , 1968 .
[15] A. Seeger,et al. DIFFUSION MECHANISMS AND POINT DEFECTS IN SILICON AND GERMANIUM. , 1968 .
[16] W. M. Bullis,et al. Properties of gold in silicon , 1966 .
[17] J. Fairfield,et al. Diffusion of Gold into Silicon Crystals , 1965 .