论文信息 - Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology

Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology

Abstract This paper presents the first successful attempt to integrate crystalline high-K gate dielectrics into a virtually damage-free damascene metal gate process. Process details as well as initial electrical characterization results on fully functional gate Gd2O3 dielectric MOSFETs with equivalent oxide thickness down to 1.9 nm are discussed.

Udo Schwalke | Yordan Stefanov | Ralf Endres

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