论文信息 - Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy - 字舞流文

Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy

C. Ferrari | G. Salviati | G. Attolini | M. Bosi | E. Buffagni | D. Orsi | L. Cristofolini | T. Rimoldi | M. Negri