论文信息 - A high-order temperature-compensated CMOS bandgap voltage reference

A high-order temperature-compensated CMOS bandgap voltage reference

A high-order temperature-compensated bandgap voltage reference (BGR) is proposed in SMIC 0.18μm CMOS process in this paper. By adding piecewise temperature compensation circuit and ΔV<inf>GS</inf> compensation circuit to the conventional BGR, the temperature performance of the proposed BGR is effectively improved. Simulation results show that the temperature coefficient of the proposed BGR is 0.6457ppm/°C when temperature is in the range from −55°C to 125°C. The proposed BGR achieves the power supply rejection ratio (PSRR) of −62.51dB, −62.42dB, −57.67dB, −39.47dB and −19.39dB at 10Hz, 100Hz, 1 kHz, 10 kHz and 100 kHz respectively.

Qianneng Zhou | Liangcai Wang | Wei Luo | Lan Xu | Hong Yang

[1] Y.P. Tsividis,et al. A CMOS voltage reference , 1978, IEEE Journal of Solid-State Circuits.

[2] Fengqi Yu,et al. A Novel 1.2–V 4.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference , 2014, IEEE Transactions on Circuits and Systems I: Regular Papers.

[3] Y. Tsividis. Accurate analysis of temperature effects in I/SUB c/V/SUB BE/ characteristics with application to bandgap reference sources , 1980, IEEE Journal of Solid-State Circuits.

[4] Bertan Bakkaloglu,et al. A Low-Noise Output Capacitorless Low-Dropout Regulator With a Switched-RC Bandgap Reference , 2017, IEEE Transactions on Power Electronics.

[5] R. M. Swanson,et al. Ion-implanted complementary MOS transistors in low-voltage circuits , 1972 .

[6] Jeongjin Roh,et al. A 1.2-V 4.2- $\hbox{ppm}/^{\circ}\hbox{C}$ High-Order Curvature-Compensated CMOS Bandgap Reference , 2015, IEEE Transactions on Circuits and Systems I: Regular Papers.

[7] Ka Nang Leung,et al. A 2-V 23-μA 5.3-ppm/°C curvature-compensated CMOS bandgap voltage reference , 2003, IEEE J. Solid State Circuits.