A high-frequency resonant gate driver for enhancement-mode GaN power devices

A novel resonant gate driver designed for the high-frequency enhancement-mode GaN HEMT power devices is proposed in this work. Simulation results indicate that it reduces gate driving loss more than 50% compared to the conventional non-resonant gate driving topology, and by 20% compared to the existing GaN resonant gate driver. The loss reduction is achieved by partially recovering gate charge to the supply during charging and discharging through a resonant process using an inductance in the gate loop. The resonant condition is managed using the desired turn-on and turn-off driving pulses at the input with specific driving time and pulse width control. These inputs also generate on-chip control signals for safely clamping the GaN power devices during the remaining switching cycle after the resonant transition has concluded. Simulations reveal improved switching waveforms using the proposed gate driver compared to the existing GaN resonant gate driving topologies.

[1]  R. Dean,et al.  Evaluation and comparison of silicon and gallium nitride power transistors in LLC resonant converter , 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

[2]  Fred Wang,et al.  A 10-MHz resonant gate driver design for LLC resonant DC-DC converters using GaN devices , 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

[3]  F.C. Lee,et al.  A resonant MOSFET gate driver with efficient energy recovery , 2004, IEEE Transactions on Power Electronics.

[4]  Yan-Fei Liu,et al.  A new resonant gate drive circuit with efficient energy recovery and low conduction loss , 2008, 31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005..

[5]  Weimin Zhang,et al.  Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration , 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

[6]  Hideaki Fujita,et al.  A resonant gate-drive circuit capable of high-frequency and high-efficiency operation , 2010, 2009 IEEE 6th International Power Electronics and Motion Control Conference.

[7]  Fred C. Lee,et al.  A resonant MOSFET gate driver with complete energy recovery , 2000, Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435).

[8]  Marco Lanuzza,et al.  Low-Power Level Shifter for Multi-Supply Voltage Designs , 2012, IEEE Transactions on Circuits and Systems II: Express Briefs.

[9]  M. R. Hoque,et al.  A CMOS Under-voltage Lockout Circuit , .

[10]  Fred Wang,et al.  Impact of planar transformer winding capacitance on Si-based and GaN-based LLC resonant converter , 2013, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[11]  Antonello Monti,et al.  Integrated circuit implementation for a GaN HFETs driver circuit , 2008 .

[12]  Zhijia Yang,et al.  A CMOS hysteresis undervoltage lockout with current source inverter structure , 2011, 2011 9th IEEE International Conference on ASIC.

[13]  Alex Lidow,et al.  GaN transistors for efficient power conversion : the eGaN FET journey continues , 2011 .