Wafer burn-in (WBI) technology for RAM's
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T. Furuyama | T. Yoshida | Natsuki Kushiyama | H. Noji | M. Kataoka | S. Doi | M. Ezawa | Toshiaki Watanabe
[1] I. Chen,et al. Accelerated testing of time-dependent breakdown of SiO2 , 1987, IEEE Electron Device Letters.
[2] J. McPherson,et al. Acceleration Factors for Thin Gate Oxide Stressing , 1985, 23rd International Reliability Physics Symposium.