Modulators at 1.3 pm Based on Free-Carrier Absorption
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[1] S. Luryi,et al. Avalanche gain in GexSi1-x/Si infrared waveguide detectors , 1986, IEEE Electron Device Letters.
[2] R. Soref,et al. All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm , 1986 .
[3] W. Gauster,et al. Laser‐Induced Infrared Absorption in Silicon , 1970 .
[4] Dennis G. Hall. Survey of Silicon-Based Integrated Optics , 1987, Computer.
[5] D. K. Schroder,et al. Free carrier absorption in silicon , 1978 .
[6] A. Herlet. The forward characteristic of silicon power rectifiers at high current densities , 1968 .
[7] Olav Solgaard,et al. All‐silicon integrated optical modulator for 1.3 μm fiber‐optic interconnects , 1989 .
[8] E. Bassous,et al. Integrated waveguide-photodetector using Si/SiGe multiple quantum wells for long wavelength applications , 1990, International Technical Digest on Electron Devices.
[9] S. Kaneda,et al. Infra-red light modulator of ridge-type optical waveguide structure using effect of free-carrier absorption , 1986 .
[10] J. Krausse. Auger-rekombination im mittelgebiet durchlassbelasteter silizium-gleichrichter und -thyristoren☆ , 1974 .