Proton-induced SEU in SiGe digital logic at cryogenic temperatures

In this work we present, for the first time, experimental results confirming an increase in single event upset (SEU) susceptibility at cold temperatures using 63 MeV protons incident on liquid-nitrogen immersed 16-bit shift registers. Silicon germanium (SiGe) BiCMOS technology has the potential to be a key platform for extreme environment electronics due to its record (Si-based) cryogenic performance and built-in multi-Mrad (SiO2) total ionizing dose (TID) tolerance.

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