Gate Leakage Current of Power GaAs MESFET's at High Temperature

Increase of gate leakage current causes decrease of gain and increase of noise In this paper, gate leakage current of GaAs MESEFTs' has been traced with different temperatures from 27℃ to 350℃ to obtain the zero voltage saturation current Js which is critical to the temperature dependency of total current From the results, thermal leakage current coefficient has been proposed to compensate for the total current due to the thermionic emission, tunneling, generation and/or hole injection.