Tangential magnetoresistance of two‐dimensional electron gas at a selectively doped n‐GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy

Magnetoresistance effect in a two‐dimensional electron gas with high electron mobility (as high as 78 000 cm2/Vs at 77 K) at an n‐GaAlAs/GaAs interface is reported for the magnetic field By, parallel to the interface. This tangential magnetoresistance is shown for the first time to contain a term having a linear dependence both on By and on electric field parallel to the current Ex, and is interpreted in terms of the scattering probability change due to the electron wave function deformation by Lorenz force. The polarity change of the linear term is shown to be the evidence for the one‐sided distribution of ionized impurities.