Design approach and analysis of a MOSFET with monolithic integrated EMI snubber for low voltage automotive applications

The trend of integration is continuously increasing in order to reach higher power densities. One promising way is the monolithic integration of RC snubber circuits into power semiconductors. This work describes a new way of monolithic integration of an RC snubber in the power semiconductor to improve electromagnetic interference (EMI). The snubber circuit is built of additional trenches next to the power semiconductor. This approach is analyzed on the basis of electrical simulations with an automotive low voltage power MOSFET. Electrical simulations prove a comparable behavior of the monolithic integrated snubber to discrete variants in the time domain during transitions as well as in the frequency domain. The monolithic integration of snubber circuits has several advantages in terms of cost efficiency and overcoming thermo-mechanical and electromechanical problems which can occur in conventional surface-mounted devices (SMDs).

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