论文信息 - A novel BIST technique for LDMOS drivers

A novel BIST technique for LDMOS drivers

In this paper we describe a novel Built-in-Self-Test (BIST) method using a voltage comparator to detect gate-oxide and drain leakage current for LDMOS by applying a pulse test stimulus. A temperature calibration circuit was also designed for LDMOS-based motor drivers.

Friedrich Taenzler | Saikat Mondal | Bruce Kim | Kenneth Moushegian

[1] J. Wood,et al. A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors , 2009, IEEE Transactions on Microwave Theory and Techniques.

[2] Zhu Jing,et al. Analysis of trigger behavior of high voltage LDMOS under TLP and VFTLP stress , 2010 .

[3] K. O'Donnell,et al. Temperature dependence of semiconductor band gaps , 1991 .

[4] Wolfgang Fichtner,et al. A New Built-In Defect-Based Testing Technique to Achieve Zero Defects in the Automotive Environment , 2011, IEEE Transactions on Device and Materials Reliability.

[5] T. R Efland,et al. Integration of power devices in advanced mixed signal analog BiCMOS technology , 2001 .

[6] Behzad Razavi,et al. Design techniques for high-speed, high-resolution comparators , 1992 .

[7] Kenneth M. Butler,et al. Physics-Based Low-Cost Test Technique for High Voltage LDMOS , 2013, J. Electron. Test..

[8] M. Brambilla,et al. Crystal defects and junction properties in the evolution of device fabrication technology , 2002 .