243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology

Two compact H-band (220–325 GHz) low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the circuits, a set of waveguide-to-microstrip transitions has been realized on 50-μm-thick GaAs substrates demonstrating an insertion loss of <0.5 dB at 243 GHz. By applying the 50 nm gate-length process, a four-stage cascode amplifier module achieved a small-signal gain of 30.6 dB at 243 GHz and more than 28 dB in the bandwidth from 218 to 280 GHz. A second amplifier module, based on the 35-nm mHEMT technology, demonstrated a considerably improved gain of 34.6 dB at 243 GHz and more than 32 dB between 210 and 280 GHz. At the operating frequency, the two broadband low-noise amplifier modules achieved a room temperature noise figure of 5.6 dB (50 nm) and 5.0 dB (35 nm), respectively.

[1]  A. Leuther,et al.  35 nm metamorphic HEMT MMIC technology , 2008, 2008 20th International Conference on Indium Phosphide and Related Materials.

[2]  W. Deal,et al.  Solid-state amplifiers for terahertz electronics , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[3]  O. Ambacher,et al.  A 243 GHz LNA Module Based on mHEMT MMICs With Integrated Waveguide Transitions , 2013, IEEE Microwave and Wireless Components Letters.

[4]  H. Massler,et al.  An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology , 2012, 2012 7th European Microwave Integrated Circuit Conference.

[5]  L. Samoska,et al.  160-270-GHz InP HEMT MMIC Low-Noise Amplifiers , 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[6]  K. Schmalz,et al.  A 245 GHz LNA in SiGe Technology , 2012, IEEE Microwave and Wireless Components Letters.

[7]  L. Samoska.  An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime , 2011, IEEE Transactions on Terahertz Science and Technology.

[8]  V. Radisic,et al.  Scaling of InP HEMT Cascode Integrated Circuits to THz Frequencies , 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[9]  M. Barsky,et al.  Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure , 2007, IEEE Microwave and Wireless Components Letters.

[10]  Wayne Yoshida,et al.  Amplifier based broadband pixel for sub-millimeter wave imaging , 2012 .

[11]  A. Leuther,et al.  A High Gain 600 GHz Amplifier TMIC Using 35 nm Metamorphic HEMT Technology , 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[12]  Munkyo Seo,et al.  THz MMICs based on InP HBT Technology , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[13]  A. Leuther,et al.  50 nm MHEMT Technology for G- and H-Band MMICs , 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

[14]  W. Deal,et al.  Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz , 2007, 2007 IEEE International Electron Devices Meeting.

[15]  V. Radisic,et al.  THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors , 2011, IEEE Transactions on Terahertz Science and Technology.

[16]  A. Leuther,et al.  A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers , 2013, 2013 European Microwave Integrated Circuit Conference.

[17]  Lorene Samoska,et al.  Low noise amplifier modules from 220–270 GHz , 2013, 2013 European Microwave Integrated Circuit Conference.