A 50–80mW SSPA from 190.8–244GHz at 0.5mW Pin

A 190.8-244GHz solid-state power amplifier MMIC is presented demonstrating 50-80mW P<sub>out</sub> at 0.5mW P<sub>in</sub> and 1.77W P<sub>DC</sub>. This represents >20dB of large-signal gain across 53GHz of high-power bandwidth, where PAE is 2.8-4.5%. This 3-stage amplifier has >28dB S<sub>21</sub> gain from 207-271GHz, peak 35dB S<sub>21</sub> gain at 220GHz, and >30dB S<sub>21</sub> gain from 210-238GHz and from 256-268GHz. A power-cascode cell topology is used for the PA unit cell, and 4:1 power combining of these cells achieves the RF powers claimed. By reducing the DC power of only the 1<sup>st</sup> and 2<sup>nd</sup> stages of the MMIC, little reduction to the saturated RF P<sub>out</sub> is observed. At 1.27W P<sub>DC</sub>, the MMIC demonstrates 43-78mW P<sub>out</sub> at 0.5mW P<sub>in</sub> over the same 190.8-244GHz bandwidth, where now the PAE is 3.3-6.1%. This work improves upon the state-of-the-art by demonstrating simultaneously higher gain by 3-8dB, increased bandwidth by 1.5× (small and large signal), increased large-signal operating frequency (past 230GHz to 244GHz), and increased PAE by 1.4 × for an SSPA at these RF output levels.

[1]  Vesna Radisic,et al.  A 75 mW 210 GHz Power Amplifier Module , 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[2]  M. Urteaga,et al.  A 220 GHz InP HBT Solid-State Power Amplifier MMIC with 90mW POUT at 8.2dB Compressed Gain , 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[3]  Z. Griffith,et al.  Multi-finger 250nm InP HBTs for 220GHz mm-wave power , 2012, 2012 International Conference on Indium Phosphide and Related Materials.

[4]  Zach Griffith,et al.  A 220GHz solid-state power amplifier MMIC with 26.8dB S21 gain, and 55.5mW Pout at 17.0dB compressed gain , 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).