A 1 to 40 GHz MESFET hybrid distributed amplifier

A 1-40-GHz hybrid amplifier with 10 dB minimum gain up to 40 GHz and using 0.3- mu m MESFETs is presented. Gain ripple is +or-1 dB in the 1-26.5-GHz range. The maximum noise figure is 7.5 dB in the 2-18-GHz range, and output power at 1-dB gain compression is 11 dB. The circuit includes a 1-40-GHz biasing system. Device S-parameters were measured in the 1-20-GHz band, and static measurements were used to derive an equivalent circuit for the FET, leading to very good agreement between simulations and measurements up to 40 GHz.<<ETX>>

[1]  Patrice Gamand,et al.  2 to 42 GHz flat gain monolithic HEMT distributed amplifiers , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

[2]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[3]  K. K. Mei,et al.  Time-domain finite difference approach for the calculation of microstrip open-circuit end effect , 1988, 1988., IEEE MTT-S International Microwave Symposium Digest.

[4]  M. Glenn,et al.  A monolithic 3 to 40 GHz HEMT distributed amplifier , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..