Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry

Monte-Carlo radiation transport code is coupled with SPICE circuit level simulation to identify regions of single event upset vulnerability in an SEU hardened flip-flop, as well as predict single event upset cross sections and on-orbit soft error rates under static and dynamic operating conditions.

[1]  T. Calin,et al.  SEU-hardened storage cell validation using a pulsed laser , 1996 .

[2]  R.A. Reed,et al.  Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM , 2007, IEEE Transactions on Nuclear Science.

[3]  J.D. Cressler,et al.  Multiple-Bit Upset in 130 nm CMOS Technology , 2006, IEEE Transactions on Nuclear Science.

[4]  A.F. Witulski,et al.  HBD layout isolation techniques for multiple node charge collection mitigation , 2005, IEEE Transactions on Nuclear Science.

[5]  L.W. Massengill,et al.  Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design , 2005, IEEE Transactions on Nuclear Science.

[6]  R.A. Reed,et al.  Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools , 2007, IEEE Electron Device Letters.

[7]  C. Carmichael,et al.  Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch , 2007, IEEE Transactions on Nuclear Science.

[8]  A. Chugg,et al.  Assessment of neutron- and proton-induced nuclear interaction and ionization models in Geant4 for Simulating single event effects , 2004, IEEE Transactions on Nuclear Science.

[9]  A.F. Witulski,et al.  Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing , 2007, IEEE Transactions on Nuclear Science.

[10]  peixiong zhao,et al.  Impact of Ion Energy and Species on Single Event Effects Analysis , 2007, IEEE Transactions on Nuclear Science.

[11]  J. Pontcharra,et al.  SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons , 2002 .

[12]  peixiong zhao,et al.  Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis , 2006, IEEE Transactions on Nuclear Science.

[13]  R.A. Reed,et al.  The effect of metallization Layers on single event susceptibility , 2005, IEEE Transactions on Nuclear Science.

[14]  L. W. Massengill,et al.  Application of RADSAFE to Model Single Event Upset Response of a 0.25 micron CMOS SRAM , 2006 .

[15]  peixiong zhao,et al.  Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology , 2005, 2005 8th European Conference on Radiation and Its Effects on Components and Systems.

[16]  S. Duzellier,et al.  Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs , 2001, RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605).

[17]  D. McMorrow,et al.  The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM , 2005, IEEE Transactions on Nuclear Science.