Heating of inclusions by intense laser radiation in transparent narrow-gap IV–VI semiconductors

Abstract Processes occurring in narrow-gap IV–VI semiconductors exposed to continuous laser radiation source in the transparency region were investigated theoretically and experimentally. The observed irreversible changes in electrophysical properties are attributed to a thermodiffusional dissolutions of locally heated inclusions. The resulting temperature of inclusions and thermoelastic strains at the inclusion-matrix boundary are determined.