论文信息 - Analysis of Fowler–Nordheim injection in NO nitrided gate oxide grown on n-type 4H–SiC

Analysis of Fowler–Nordheim injection in NO nitrided gate oxide grown on n-type 4H–SiC

Abstract Fowler–Nordheim injection in NO nitrided gate oxides, grown on n-type 4H–SiC, has been investigated at room temperature and 300°C. The results show that NO increases the electron injection barrier height to a value which is very close to the theoretical value at room temperature. Excessive temperature dependence of the electron injection barrier height is also significantly reduced by the nitridation.

[1] M. Lenzlinger,et al. Fowler‐Nordheim Tunneling into Thermally Grown SiO2 , 1969 .

[2] H. B. Harrison,et al. Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy , 1999 .

[3] A. Agarwal,et al. Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors , 1997, IEEE Electron Device Letters.

[4] Max J. Schulz,et al. Band offsets and electronic structure of SiC/SiO2 interfaces , 1996 .

[5] Robert J. Trew,et al. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications , 1991, Proc. IEEE.

[6] Constantin Papadas,et al. Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures , 1995 .