Characterization of SiOx/Si/SiOx Coated n-InP Facets of Semiconductor Lasers Using Spatially-Resolved Photoluminescence

Maps of the room temperature photoluminescence (PL) yield from SiOx/Si/SiOx coated semiconductor laser facets were made during the course of accelerated lifetesting. A localized degradation of the PL yield was detected under the active region after aging, which signifies a localized decrease of the radiative recombination efficiency. The surface reflectance was also investigated and was found to be uncorrelated with the localized degradation of the PL yield.