Impurity-disordered, coupled-stripe Al(x)Ga(1-x)As-GaAs quantum well laser
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Robert D. Burnham | William Streifer | Robert L. Thornton | Kathleen Meehan | Nick Holonyak | John E. Epler | Paul Gavrilovic
[1] D. Scifres,et al. Focusing of a 7700-A high power phased array semiconductor laser , 1982 .
[2] H. Nakashima,et al. GaAlAs buried multi-quantum-well laser fabricated by diffusion induced disordering , 1984, 1983 International Electron Devices Meeting.
[3] N. Holonyak,et al. Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering , 1985 .
[4] N. Holonyak,et al. Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion , 1984 .
[5] Thomas L. Paoli,et al. Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror , 1983 .
[6] Robert D. Burnham,et al. Donor‐induced disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum‐well lasers , 1985 .
[7] N. Holonyak,et al. Supermodes of multiple‐stripe quantum‐well heterostructure laser diodes operated (cw, 300 K) in an external‐grating cavity , 1985 .
[8] Thomas L. Paoli,et al. Far‐field supermode patterns of a multiple‐stripe quantum well heterostructure laser operated (∼7330 Å, 300 K) in an external grating cavity , 1984 .
[9] Karl Hess,et al. Disorder of an AlAs‐GaAs superlattice by impurity diffusion , 1981 .
[10] D. Scifres,et al. Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition , 1982 .
[11] N. Holonyak,et al. IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity , 1981 .