Reliability evaluation of GaAs HBT technologies

This work describes the implementation of an experimental procedure to evaluate the reliability of Heterojunction Bipolar Transistors (HBT) on a GaAs substrate. It is based on the separation of ageing test accelerating factors applied to HBTs and TLM ("Transmission Line Model") structures associated with emitter base and collector layers. Three different technological manufacturing processes are investigated : AlGaAs/GaAs double-mesa HBT, GaInP/GaAs self-aligned HBT and GaInP/GaAs fully planar HBT. HBTs submitted to combined bias and temperature stresses exhibit either a degradation of the SiN/GaAs interface correlated with the increase of the emitter-base leakage current and/or a detachment of Ge/Mo/W emitter ohmic contact related to the base and collector current decrease for high level injection in the forward regime. These investigations have assessed that GaInP over the extrinsic base acts as a better passivation layer than the conventional SiN does.

[1]  P.C. Grossman,et al.  Reliability performance of components and ICs from a production 1 /spl mu/m GaAs HBT process , 1999, 1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459).

[2]  T. Henderson,et al.  Physics of degradation in GaAs-based heterojunction bipolar transistors , 1999 .

[3]  C. Maneux,et al.  Analysis of Two Degradation Mechanisms in GaInP/GaAs Fully Planar HBT Technology , 1999 .

[4]  T. Fujii,et al.  Current status of reliability of InGaP/GaAs HBTs , 1997 .

[5]  C. Maneux,et al.  Analysis of GaAs HBT failure mechanisms: impact on life test strategy , 1997, Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[6]  T. Henderson.  The GaAs heterojunction bipolar transistor: an electron device with optical device reliability , 1996, Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis.

[7]  C. Maneux,et al.  Analysis of the surface base current drift in GaAs HBT's , 1996, Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis.

[8]  H. Sugahara.  GaAs HBT RELIABILITY , 1994 .

[9]  Hirohiko Sugahara,et al.  Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed base , 1993, 15th Annual GaAs IC Symposium.

[10]  Guann-Pyng Li,et al.  Resolving degradation mechanisms in ultra-high performance N-p-n heterojunction bipolar transistors , 1993 .

[11]  O. Nakajima,et al.  Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded InxGa1-xAs Layers , 1986 .

[12]  M. Gauneau,et al.  Comprehensive study of AuMn p-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors , 1986 .