Nonlinear FP etalons and microlaser devices
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[1] Y. H. Lee,et al. 3‐pJ, 82‐MHz optical logic gates in a room‐temperature GaAs‐AlGaAs multiple‐quantum‐well étalon , 1985 .
[2] A. L. Lentine,et al. Symmetric self-electrooptic effect device : optical set-reset latch, defferential logic gate and differential modulator/detector , 1989 .
[3] Larry A. Coldren,et al. High‐efficiency TEM00 continuous‐wave (Al,Ga)As epitaxial surface‐emitting lasers and effect of half‐wave periodic gain , 1989 .
[4] B. E. Hammons,et al. Surface-emitting, multiple quantum well GaAs/AlGaAs laser with wavelength-resonant periodic gain medium , 1988 .
[5] N. A. Olsson,et al. Room‐temperature continuous‐wave vertical‐cavity surface‐emitting GaAs injection lasers , 1989 .
[6] Piet Demeester,et al. High‐reflectivity GaAs‐AlGaAs mirrors: Sensitivity analysis with respect to epitaxial growth parameters , 1987 .
[7] Amnon Yariv,et al. Scaling laws and minimum threshold currents for quantum-confined semiconductor lasers , 1988 .
[8] Won-Tien Tsang,et al. Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy , 1982 .
[9] Jack L. Jewell,et al. Low threshold electrically-pumped vertical-cavity surface-emitting micro-lasers , 1989 .
[10] Axel Scherer,et al. Transverse modes, waveguide dispersion, and 30 ps recovery in submicron GaAs/AlAs microresonators , 1989 .
[11] Tatsuhiko Niina,et al. Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions , 1989 .
[12] H. Morkoç,et al. Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained-layer superlattices , 1988 .
[13] H. Casey,et al. Refractive index of AlxGa1−xAs between 1.2 and 1.8 eV , 1974 .
[14] James R. Leger,et al. Coherent addition of AlGaAs lasers using microlenses and diffractive coupling , 1988 .
[15] Kam Y. Lau,et al. Ultralow‐threshold graded‐index separate‐confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatings , 1987 .
[16] J. L. Jewell,et al. GaAs-AlAs Monolithic Microresonator Arrays , 1987, Other Conferences.
[17] A. Yariv,et al. Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers , 1988, 1987 International Electron Devices Meeting.
[18] L. M. Zinkiewicz,et al. High‐power vertical‐cavity surface‐emitting AlGaAs/GaAs diode lasers , 1989 .
[19] Paul A. Kohl,et al. Photoelectrochemical etching of integral lenses on InGaAsP/InP light‐emitting diodes , 1983 .
[20] James N. Walpole,et al. Gallium phosphide microlenses by mass transport , 1989 .
[21] Axel Scherer,et al. Lasing characteristics of GaAs microresonators , 1989 .
[22] J. Winthrop,et al. Theory of Fresnel Images. I. Plane Periodic Objects in Monochromatic Light , 1965 .
[23] Y. H. Lee,et al. Optical computing and related microoptic devices. , 1990, Applied optics.
[24] F.J. Leonberger,et al. Optical interconnections for VLSI systems , 1984, Proceedings of the IEEE.
[25] Yong-Hee Lee,et al. Vertical Cavity Single-Quantum-Well Laser , 1989, Photonic Switching.
[26] M. E. Prise,et al. Free-space optical interconnection scheme. , 1990, Applied optics.
[27] S H Lee,et al. Comparison between optical and electrical interconnects based on power and speed considerations. , 1988, Applied optics.
[28] Larry A. Coldren,et al. Analysis and design of a novel parallel-driven MQW-DBR surface-emitting diode laser , 1988 .
[29] Jack L. Jewell,et al. Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes , 1989 .
[30] D. Miller. Optics for low-energy communication inside digital processors: quantum detectors, sources, and modulators as efficient impedance converters. , 1989, Optics letters.
[31] Kenichi Iga,et al. Room temperature cw vertical cavity surface emitting laser and high power 2-D laser array , 1989 .
[32] J. P. Harbison,et al. Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds , 1989 .