The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells
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Mo Li | Z. Liu | D. Jiang | G. Du | Wenjie Wang | Y. Xing | Liyuan Peng | J. Yang | P. Chen | S. T. Liu | L. Q. Zhang | W. Liu | Juntao Zhu | Y. T. Zhang | D. Zhao | F. Liang