Kinetics of metastability in doped hydrogenated amorphous silicon
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Robert A. Street | Warren B. Jackson | N. M. Johnson | R. Street | W. Jackson | N. Johnson | C. Nebel | C. E. Nebel
[1] W. Spear,et al. Substitutional doping of amorphous silicon , 1993 .
[2] R. Street,et al. Stability of hydrogenated amorphous silicon deposited at high temperatures with a remote hydrogen plasma , 1991 .
[3] W. Spear,et al. An investigation of the phosphorus doping mechanism in a-Si by sweep-out experiments , 1991 .
[4] N. Johnson. Hydrogen in crystalline and amorphous silicon , 1991 .
[5] S. Taraskin. Thermalization in a system with a continuous spectrum of states , 1991 .
[6] Warren B. Jackson,et al. THE HYDROGEN GLASS MODEL , 1989 .
[7] R. Street,et al. THERMAL EQUILIBRIUM EFFECTS IN DOPED HYDROGENATED AMORPHOUS SILICON , 1989 .
[8] R. Street,et al. Realistic modeling of the electronic properties of doped amorphous silicon , 1988 .
[9] Kakalios,et al. Electron drift mobility in doped amorphous silicon. , 1988, Physical review. B, Condensed matter.
[10] Chang,et al. Theory of hydrogen passivation of shallow-level dopants in crystalline silicon. , 1988, Physical review letters.
[11] Jackson,et al. Mechanisms of thermal equilibration in doped amorphous silicon. , 1988, Physical review. B, Condensed matter.
[12] Y. Hamakawa,et al. Amorphous silicon technology , 1988 .
[13] Jackson,et al. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. , 1987, Physical review letters.
[14] Biegelsen,et al. Detailed investigation of doping in hydrogenated amorphous silicon and germanium. , 1987, Physical review. B, Condensed matter.
[15] Tsai,et al. Thermal-equilibrium processes in amorphous silicon. , 1987, Physical review. B, Condensed matter.
[16] R. Street,et al. Bias annealing of doped amorphous silicon , 1986 .
[17] R. Chittick,et al. The Preparation and Properties of Amorphous Silicon , 1969 .