Fabrication and characteristics analysis of vertical organic photoelectric transistor

We prepared a photoelectric transistor(OPTs)with the vertical structure of Cu / CuPc / Al / CuPc / ITO. The material of CuPc semiconductor has good photosensitive properties. Excitons will be generated after the optical signal irradiation in semiconductor material, and transformed into photocurrent under the built-in electric field by the Schottky contact, as the organic transistor drive current, which makes the output current multiplication. The static currentvoltage output characteristics of OPTs in 700 nm light and in dark are observed. When device was irradiated by 700nm light, its working current significantly increased. In 700nm light, when Vec=3V, Vb=0 V the ratio of light and no light current was 1.51 times. Unsaturated current and low operation voltage for OPTs are observed.

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